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 0001A SERIES
High speed switching Silicon N-channel MOSFET
DESCRIPTION
INK0001A is a Silicon N-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.
OUTLINE DRAWING
INK0001AT2 INK0001AM1
2.1 0.2 0.8 0.2 0.425 1.25
Unitmm
0.425
0.25
0.4
FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=0.61.2V Low on Resistance. Ron=3.5(TYP) High speed switching. Small package for easy mounting.
1.2 0.8
0.65


2.0 1.3
0.4
0.9
0.65
0.7
APPLICATION
high speed switching , Analog switching JEITA, JEDEC ISAHAYAT-USM TERMINAL CONNECTOR GATE SOURCE DRAIN INK0001AU1
1.6
JEITASC-70 JEDEC TERMINAL CONNECTOR GATE SOURCE DRAIN INK0001AC1
2.5 0.4 0.5 1.5 0.5
EQUIVALENT CIRCUIT
D
0.4
0.8
0.3
00.1
0.15 00.1 0.16 0.4
0.5

1.6 1.0
S
0.7
0.55
0.15
1.1
JEITASC-75A JEDEC TERMINAL CONNECTOR GATE SOURCE DRAIN
00.1
JEITASC-59 JEDECSimilar to TO-236 T TERMINAL CONNECTOR GATE SOURCE DRAIN
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
G
0.5
2.9 1.90
0.95
0.5
0.3
0001A SERIES
High speed switching Silicon N-channel MOSFET
MAXIMUM RATING
SYMBOL DSS GSS D ch PARAMETER Drain-source voltage Gate-source voltage Drain current Total power dissipation Ta=25 Channel temperature Range of Storage temperature INK0001AT2 RATING INK0001AU1 INK0001AM1 50 8 100 150 +150 -55+150 200 INK0001AC1 UNIT V V mA mW
125 +125 -55+125
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
TEST CONDITION I D=100A, V V V V
GS DS GS
V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss tON tOFF
=0V
MIN 50 0.6 -
LIMIT TYP 250 3.5 24 5 11 50
MAX 0.5 1.0 1.2 -
UNIT V A A V mS pF pF ns
=5V, VDS=0V
DS= V
=50V ,VGS=0V
GS
I D=250A, V
DS
=10V, I D=0.1A
GS
I D=100mA, V V V V V
DS
=4.0V
=10V, V
GS
=0V,f=1MHz
DS=10V, V DD GS
GS=0V,f=1MHz
=5V , I D=10mA =05V
Switching time test condition
test circuit
5V IN
OUT
5V
90%
RL 0 10s VDD=5V D.U.1% Common source Ta=25 50 VDD
input waveform
0V VDD
10%
10%
output waveform
VDS(ON
ton
90%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25 100 1.6V 80 Drain current ID (mA) 1.4V 60 1.3V 1.2V 20 1.1V VGS=1.0V 0 5 Drain-Source voltage VDS (V) 10 Drain current ID (mA) 1.5V 0.8 ID -VDS 1 1.0V 0.95V Ta=25 ID -VDS(Low voltage region)
0.6
40
0.4
0.9V
0.2
0.85V VGS=0.8V
0
0 0 0.1 0.2 0.3 0.4 0.5 Drain-Source voltage VDS (V)
IDR -VDS 100 Drain reverse current IDR (mA) Ta=25 VGS=0V Drain current ID (mA) 1000 Ta=25 VDS=10V
ID -VGS
100
10
10
1 -0 -0.5 -1 -1.5 Drain-Source voltage VDS (V) |Yfs| - ID 1000 Ta=25 VDS=10V Forward transfer admittance |Yfs| (mS) Drain-Source ON voltage VDS(ON) (mV) -2
1 0 1 2 3 Gate-Source voltage VGS (V) VDS(ON) - ID 1000 Ta=25 VGS=4V 4 5
100
100
10
10
1 1 10 100 Drain current ID (mA) t - ID 10000 Ta=25 toff 1000 Switching time t (ns) 100 1000
1 1 10 Drain currentID (mA) C - VDS 100
Ciss Capacitance C (pF) tf
100
10 Coss
10
ton tr
Ta=25 VGS=0V 1
1 0.1 1 10 Drain current ID (mA) 100
0.1
1 10 Drain-Source voltage VDS (V)
100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Oct.2008


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